avalanche breakdown
英 [ˈævəlɑːnʃ ˈbreɪkdaʊn]
美 [ˈævəlæntʃ ˈbreɪkdaʊn]
网络 雪崩击穿; 累增崩溃; 突崩溃; 雪崩击穿电压; 雪崩崩溃
双语例句
- What was known as avalanche breakdown occurred.
通常所谓的雪崩式击穿现象爆发了。 - Avalanche breakdown semiconductor laser
雪崩击穿式半导体激光器 - Application of avalanche noise detection as a criterion for surface breakdown mechanism of high& voltage silicon p+ pnn+ junctions
雪崩噪声鉴别法在高压硅P~+PNN~+结表面击穿机理判定中的应用 - By using the definition of effective doping concentration gradient and depletion approximation, an analytical solution for avalanche breakdown voltage of double sided asymmetric linearly graded junction has been derived.
通过有效掺杂浓度梯度的定义和耗尽近似求解，得到非对称线性缓变结击穿电压的简洁表达式。 - The results of MEDICI simulation indicate that the technology helps improve the avalanche breakdown voltage to over 90% of parallel planar junctions, improve β 0 of low current densities by reducing parasitic effect and leakage current.
采用MEDICI模拟分析表明，该技术可将双极器件的击穿电压BVCB0提高到平行平面结的90%以上；可减小寄生效应和漏电流，有助于提高小电流β0； - Avalanche Breakdown Voltage Calculation of GaAs Gaussian Profile Schottky Diodes
高斯掺杂分布GaAs肖特基结的雪崩击穿电压 - There are two main mechanisms that one of which is the avalanche breakdown, so-call intrinsic type, and the other is the filament heating transport leading to the destructive breakdown exist in the breakdown process.
在本模型中，整个击穿过程主要包含两个机构，一个是本征型的雪崩击穿，另一个是引起膜的破坏性击穿的丝状热传递。 - The study of avalanche breakdown voltage for hyperabrupt varactor diode
超突变结构变容二极管雪崩击穿电压的研究 - Based on the false alarm control theory and the characteristic of the chip microcomputer's convenience to treating and holding digital information, a numeric control bias circuit auto-tracing the avalanche breakdown voltage is designed.
基于偏压的虚警控制原理，利用单片机便于数据处理和存储的特点，设计了一个自动跟踪雪崩管击穿电压的数控偏压电路。 - The Area Contact Model of Depletion Layer Width Under Avalanche Breakdown in Si Epitaxial Wafer by a Three-Probe Method
三探针测试硅外延片中雪崩击穿时耗尽层宽度的面接触模型 - The simulation analysis indicates that with this structure the avalanche breakdown voltage of RF power transistors can be increased to be over 90% of that for an ideal parallel planar junction, and the large current characteristics and frequency characteristics can be improved, too.
模拟分析表明，采用该结构，器件的雪崩击穿电压能提高到理想平行平面结的90%以上，器件的大电流特性和频率特性也有所改进。 - The design and fabrication of high-voltage power devices with avalanche breakdown bulk characteristic under high temperature needs to carefully control the breakdown voltage stability and surface characteristic of the devices as the power rate increases.
具有雪崩体特性击穿的高温高压大功率硅器件的设计和制造，需要对器件的耐压稳定性和表面特性进行细致地控制以获得优良特性。 - Analytical Calculation of Avalanche Breakdown Parameters in High-Voltage Diffused p-n Junction
高压扩散结雪崩击穿参量的解析计算 - Gate-Drain Avalanche Breakdown in GaAs Power MESFET's
GaAs功率MESFET的栅-漏雪崩击穿 - Calculation results has shown that for nanosecond or subnanosecond laser pulses, initial heating electrons in strongly absorbing media contributes significantly to avalanche ionization and optical breakdown threshold decreases with increasing tissue absorbance;
结果表明，对于纳秒或亚纳秒脉冲激光，强吸收介质的热电子发射对电子雪崩电离过程有很大影响，等离子体光学击穿阈值随生物组织吸收的增加而降低； - When avalanche photoelectric diodes ( APD) are operated above the breakdown voltage in Geiger mode, they can be used to detect single photon. Therefore, APD-based single photon detectors are wildly used in the fields of quantum information and weak light detection areas.
工作在盖革模式下的雪崩光电二极管可以用来探测单光子，被广泛地应用于量子信息领域与传统探测领域。 - Toward to resistor model, the linearity electric resistance and saturated regions, avalanche multiplications and electrothermal breakdown regions has built and analyze the characteristics respective.
对于电阻模型，建立了从线性电阻和速率饱和区域、雪崩倍增和热电击穿区域来分段分析其特性。 - PN junction is the foundation of almost all the power devices. The avalanche breakdown voltage of PN junction determines the work voltage range of related power devices.
PN结构成了几乎所有半导体功率器件的基础，其雪崩击穿电压直接决定了相关器件的工作电压范围。